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irfr/u5305 hexfet ? power mosfet fifth generation hexfets from international rectifier utilizeadvanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet ? power mosfets are well known for, provides the designer with an extremely efficient and reliable devicefor use in a wide variety of applications. the d-pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. the straight lead version (irfu series) is for through-hole mounting applications. power dissipation levels up to 1.5 watts are possible in typical surface mount applications. parameter max. units i d @ t c = 25c continuous drain current, v gs @ -10v -31 i d @ t c = 100c continuous drain current, v gs @ -10v -22 a i dm pulsed drain current ?? -110 p d @t c = 25c power dissipation 110 w linear derating factor 0.71 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ?? 280 mj i ar avalanche current ?? -16 a e ar repetitive avalanche energy ? 11 mj dv/dt peak diode recovery dv/dt ?? -5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) absolute maximum ratings parameter typ. max. units r jc junction-to-case CCC 1.4 r ja junction-to-ambient (pcb mount)* CCC 50 c/w r ja junction-to-ambient** CCC 110 thermal resistance v dss = -55v r ds(on) = 0.065 i d = -31a l ultra low on-resistance l surface mount (irfr5305) l straight lead (irfu5305) l advanced process technology l fast switching l fully avalanche rated description 10/23/00 s d g d-pak i-pak irfr5305 irfu5305 pd - 91402a downloaded from: http:///
irfr/u5305 2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC -1.3 v t j = 25c, i s = -16a, v gs = 0v ? t rr reverse recovery time CCC 71 110 ns t j = 25c, i f = -16a q rr reverse recovery charge CCC 170 250 nc di/dt = -100a/s ?? source-drain ratings and characteristics parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -55 CCC CCC v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC -0.034 CCC v/c reference to 25c, i d = -1ma r ds(on) static drain-to-source on-resistance CCC CCC 0.065 v gs = -10v, i d = -16a ? v gs(th) gate threshold voltage -2.0 CCC -4.0 v v ds = v gs , i d = -250a g fs forward transconductance 8.0 CCC CCC s v ds = -25v, i d = -16a ? CCC CCC -25 a v ds = -55v, v gs = 0v CCC CCC -250 v ds = -44v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 63 i d = -16a q gs gate-to-source charge CCC CCC 13 nc v ds = -44v q gd gate-to-drain ("miller") charge CCC CCC 29 v gs = -10v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 14 CCC v dd = -28v t r rise time CCC 66 CCC i d = -16a t d(off) turn-off delay time CCC 39 CCC r g = 6.8 t f fall time CCC 63 CCC r d = 1.6 , see fig. 10 ?? between lead, CCC CCC 6mm (0.25in.)from package and center of die contact ? c iss input capacitance CCC 1200 CCC v gs = 0v c oss output capacitance CCC 520 CCC pf v ds = -25v c rss reverse transfer capacitance CCC 250 CCC ? = 1.0mhz, see fig. 5 ? nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance CCC CCC i gss ns 4.5 7.5 i dss drain-to-source leakage current ? repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) ? i sd -16a, di/dt -280a/s, v dd v (br)dss , t j 175c notes: ? v dd = -25v, starting t j = 25c, l = 2.1mh r g = 25 , i as = -16a. (see figure 12) ? pulse width 300s; duty cycle 2%. -31 -110 a s d g s d g ? this is applied for i-pak, l s of d-pak is measured between lead and center of die contact. ? uses irf5305 data and test conditions. * when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. ** uses typical socket mount. downloaded from: http:///
irfr/u5305 www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 d ds 20s pulse w idth t = 25c c a -i , d rain-to-source c urrent (a) -v , drain-to-source voltage (v) vgs to p - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bot tom - 4.5v -4.5v 1 10 100 1000 0.1 1 10 100 d ds a -i , drain-to-source current (a) -v , drain-to-source volta g e ( v ) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 20 s pulse w idth t = 175c c 1 10 100 4567891 0 t = 25c j t = 175c j a v = -25v 20s pulse w idth ds gs -v , gate-to-source volta g e ( v ) d -i , drain-to-source c urrent (a) 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (n orm alized) a i = -27a v = -10v d gs j j downloaded from: http:///
irfr/u5305 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 500 1000 1500 2000 2500 1 10 100 c, capacitance (pf) a v = 0v , f = 1mhz c = c + c , c shorte d c = c c = c + c gs iss g s g d ds rss g d oss ds g d c iss c oss c rss ds -v , drain-to-source volta g e ( v ) 0 4 8 12 16 20 0 1 02 03 04 05 06 0 q , total g ate char g e ( nc ) g a for test circuit s ee figure 13 v = -44v v = -28v i = -16a gs -v , g ate-to-s ource v oltage (v) d dsds 10 100 1000 0.4 0.8 1.2 1.6 2.0 t = 25c j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain volta g e ( v ) t = 175c j 1 10 100 1000 1 10 100 ope ration in this area limite d by r ds(on) 100s 1ms 10ms a t = 25c t = 175c sin g le p u ls e cj ds -v , drain-to-source volta g e ( v ) d -i , drain current (a) downloaded from: http:///
irfr/u5305 www.irf.com 5 fig 10a. switching time test circuit fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v ds -10v pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. v ds 90% 10% v gs t d(on) t r t d(off) t f + - 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
irfr/u5305 6 www.irf.com fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current q g q gs q gd v g charge -10v d.u.t. v ds i d i g -3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 0 100 200 300 400 500 600 700 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a startin g t , junction temperature ( c ) v = -25v i to p -6.6a -11a bottom -16a dd d fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a -20v 15v downloaded from: http:///
irfr/u5305 www.irf.com 7 peak diode recovery dv/dt test circuit p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? ? r g v dd ? dv/dt controlled by r g ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer ? * reverse polarity for p-channel ** use p-channel driver for p-channel measurements * v gs * ** [ ] [ ] *** v gs = 5.0v for logic level and 3v drive devices [ ] *** fig 14. for p-channel hexfets downloaded from: http:///
irfr/u5305 8 www.irf.com d-pak (to-252aa) package outline dimensions are shown in millimeters (inches) d-pak (to-252aa) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) m in . 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - s o u r c e 4 - d r a in 10.42 (.410) 9.40 (.370) notes: 1 d imension ing & tolerancin g per ansi y 14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r m s t o je d e c o u t lin e t o -252 a a . 4 dimensions show n are before solder dip, sold er d ip max. +0.16 (.006). downloaded from: http:///
irfr/u5305 www.irf.com 9 i-pak (to-251aa) package outline dimensions are shown in millimeters (inches) i-pak (to-251aa) part marking information 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010 ) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - source 4 - d r a in notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r ms to je d e c o u t lin e to -25 2a a . 4 d im e n s io n s s h o w n a r e b e f o r e s o l d e r d ip , solder dip max. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018) downloaded from: http:///
irfr/u5305 10 www.irf.com tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 m m 13 inch d-pak (to-252aa) tape & reel information dimensions are shown in millimeters (inches) ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional centre: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 10/00 downloaded from: http:///
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:///

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